2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer
About Silicon Carbide SiC crystal
- Advantagement
- • Low lattice mismatch
- • High thermal conductivity
- • Low power consumption
- • Excellent transient characteristics
- • High band gap
Application areas
- 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
- diodes, IGBT, MOSFET
- 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
SILICON CARBIDE MATERIAL PROPERTIES
Property |
4H-SiC, Single Crystal |
6H-SiC, Single Crystal |
Lattice Parameters |
a=3.076 Å c=10.053 Å |
a=3.073 Å c=15.117 Å |
Stacking Sequence |
ABCB |
ABCACB |
Mohs Hardness |
≈9.2 |
≈9.2 |
Density |
3.21 g/cm3 |
3.21 g/cm3 |
Therm. Expansion Coefficient |
4-5×10-6/K |
4-5×10-6/K |
Refraction Index @750nm |
no = 2.61
ne = 2.66
|
no = 2.60
ne = 2.65
|
Dielectric Constant |
c~9.66 |
c~9.66 |
Thermal Conductivity (N-type, 0.02 ohm.cm) |
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
|
|
Thermal Conductivity (Semi-insulating) |
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
|
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
|
Band-gap |
3.23 eV |
3.02 eV |
Break-Down Electrical Field |
3-5×106V/cm |
3-5×106V/cm |
Saturation Drift Velocity |
2.0×105m/s |
2.0×105m/s |
Standard spec.
2inch diameter Silicon Carbide (SiC) Substrate Specification |
|
Grade |
Zero MPD Grade |
Production Grade |
Research Grade |
Dummy Grade |
|
|
Diameter |
50.8 mm±0.2mm |
|
|
Thickness |
330 μm±25μm or 430±25um |
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|
Wafer Orientation |
Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI |
|
|
Micropipe Density |
≤0 cm-2 |
≤5 cm-2 |
≤15 cm-2 |
≤100 cm-2 |
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|
Resistivity |
4H-N |
0.015~0.028 Ω•cm |
|
|
6H-N |
0.02~0.1 Ω•cm |
|
|
4/6H-SI |
≥1E5 Ω·cm |
|
|
Primary Flat |
{10-10}±5.0° |
|
|
Primary Flat Length |
18.5 mm±2.0 mm |
|
|
Secondary Flat Length |
10.0mm±2.0 mm |
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|
Secondary Flat Orientation |
Silicon face up: 90° CW. from Prime flat ±5.0° |
|
|
Edge exclusion |
1 mm |
|
|
TTV/Bow /Warp |
≤10μm /≤10μm /≤15μm |
|
|
Roughness |
Polish Ra≤1 nm |
|
|
CMP Ra≤0.5 nm |
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|
Cracks by high intensity light |
None |
1 allowed, ≤2 mm |
Cumulative length ≤ 10mm, single length≤2mm |
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Hex Plates by high intensity light |
Cumulative area ≤1% |
Cumulative area ≤1% |
Cumulative area ≤3% |
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Polytype Areas by high intensity light |
None |
Cumulative area ≤2% |
Cumulative area ≤5% |
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Scratches by high intensity light |
3 scratches to 1×wafer diameter cumulative length |
5 scratches to 1×wafer diameter cumulative length |
5 scratches to 1×wafer diameter cumulative length |
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|
|
edge chip |
None |
3 allowed, ≤0.5 mm each |
5 allowed, ≤1 mm each |
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ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
Packing and Delivery
>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.